InN Nanowires: Growth and Optoelectronic Properties
نویسنده
چکیده
An overview on InN nanowires, fabricated using either a catalyst-free molecular beam epitaxy method or a catalyst assisted chemical vapor deposition process, is provided. Differences and similarities of the nanowires prepared using the two techniques are presented. The present understanding of the growth and of the basic optical and transport properties is discussed.
منابع مشابه
Recent Advances on p-Type III-Nitride Nanowires by Molecular Beam Epitaxy
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